| 摘要 |
PROBLEM TO BE SOLVED: To improve characteristics by reforming the interface between a silicon substrate and an insulating film. SOLUTION: In the semiconductor manufacturing method to form a high-k film 21 and a gate electrode 24 on a silicon substrate 11; the annealing process 23 is executed in the fluorine atmosphere after formation of the high-k film, and the subsequent process temperature is set to 600°C or lower. COPYRIGHT: (C)2006,JPO&NCIPI
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