| 摘要 |
A first substrate and second substrate both having thereon a top bulk metal layer and a lower barrier layer are prepared. The first substrate is first loaded onto a first platen of a CMP tool, and then an upper portion of the top bulk metal layer of the first substrate is removed by first platen and first slurry. The first substrate is then transferred to a second platen having second slurry. The second substrate is loaded onto the first platen. Simultaneously, the remaining top bulk metal layer of the first substrate and an upper portion of top bulk metal layer of the second substrate are removed at substantially the same copper removal rate until the lower barrier layer of the first substrate is exposed. The first substrate is transferred to a third platen having third slurry for polishing the exposed barrier layer.
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