发明名称 Biased pulse DC reactive sputtering of oxide films
摘要 A biased pulse DC reactor for sputtering of oxide films is presented. The biased pulse DC reactor couples pulsed DC at a particular frequency to the target through a filter which filters out the effects of a bias power applied to the substrate, protecting the pulsed DC power supply. Films deposited utilizing the reactor have controllable material properties such as the index of refraction. Optical components such as waveguide amplifiers and multiplexers can be fabricated using processes performed on a reactor according to the present inention.
申请公布号 US2006054496(A1) 申请公布日期 2006.03.16
申请号 US20050228834 申请日期 2005.09.16
申请人 发明人 ZHANG HONGMEI;NARASIMHAN MUKUNDAN;MULLAPUDI RAVI B.;DEMARAY RICHARD E.
分类号 C23C14/00;C23C14/32;C23C14/34;C23C14/35;G02B6/132;H01J37/34 主分类号 C23C14/00
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