TOP SURFACE DRAIN MOS GATE DEVICE AND METHOD FOR MANUFACTURING IT

摘要

PROBLEM TO BE SOLVED: To decrease the electrostatic capacity between a gate and a drain and decrease the on-state resistance and the gate resistance of a MOS gate device die. SOLUTION: This device having a drain electrode on a die top surface and a source electrode on a die bottom front surface acts on control voltage connected between a drain region and a gate region. A device cell has a main body short trench and a gate trench. Gate polycrystalline is arranged on a gate trench bottom and is arranged adjacently to thin gate oxide for lining a channel region by the overlap of a minimum drain drift region. A main body short trench bottom comprises a contact for shunting a main body region to the channel region. A main body short surface drain region and gate polysilicon are simultaneously silicided. The gate trench is expanded on the top surface in order to improve the property of Qgd. The main body short trench and the gate trench are simultaneously filled up with a gap filling material. COPYRIGHT: (C)2006,JPO&NCIPI