发明名称 FUNCTIONAL THIN FILM ELEMENT, MANUFACTURING METHOD OF FUNCTIONAL THIN FILM ELEMENT AND ARTICLE USING FUNCTIONAL THIN FILM ELEMENT
摘要 PROBLEM TO BE SOLVED: To provide a functional thin film element extended in a service life by reducing its driving voltage by arbitrarily controlling the height of a potential barrier on a bonded interface between an anode electrode and a functional thin film; to provide an article using the functional thin film element; and to provide a manufacturing method of a functional thin film element capable of being driven at a low voltage by simplifying the manufacturing method to reduce a cost. SOLUTION: This functional thin film element is provided with a substrate 2, the anode 3 formed on the substrate 2, a luminescent layer 4 formed on the anode 3 and a cathode 5 formed on the luminescent layer 4; and is characterized by that negative ions 6 are doped into a surface of the anode 3 on the bonded interface between the anode 3 and the luminescent layer 4 or a surface of the luminescent layer 4. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006073272(A) 申请公布日期 2006.03.16
申请号 JP20040253226 申请日期 2004.08.31
申请人 NISSAN MOTOR CO LTD 发明人 KUMAZAWA KINYA;SAYASHI MAMORU
分类号 H05B33/26;H01L51/50;H05B33/02;H05B33/10 主分类号 H05B33/26
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