发明名称 Flash memory devices having a voltage trimming circuit and methods of operating the same
摘要 A flash memory device includes a trimming circuit that is configured to generate a plurality of identification voltages associated with a plurality of memory cell threshold voltage states, respectively, and to trim the plurality of identification voltages responsive to trimming information.
申请公布号 US2006056238(A1) 申请公布日期 2006.03.16
申请号 US20040023896 申请日期 2004.12.28
申请人 PARK JIN-SUNG;BYEON DAE-SEOK 发明人 PARK JIN-SUNG;BYEON DAE-SEOK
分类号 G11C11/34 主分类号 G11C11/34
代理机构 代理人
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