发明名称 |
Flash memory devices having a voltage trimming circuit and methods of operating the same |
摘要 |
A flash memory device includes a trimming circuit that is configured to generate a plurality of identification voltages associated with a plurality of memory cell threshold voltage states, respectively, and to trim the plurality of identification voltages responsive to trimming information.
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申请公布号 |
US2006056238(A1) |
申请公布日期 |
2006.03.16 |
申请号 |
US20040023896 |
申请日期 |
2004.12.28 |
申请人 |
PARK JIN-SUNG;BYEON DAE-SEOK |
发明人 |
PARK JIN-SUNG;BYEON DAE-SEOK |
分类号 |
G11C11/34 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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