发明名称 |
Semiconductor device and method for manufacturing semiconductor device |
摘要 |
A semiconductor device having excellent crystallinity and excellent electric characteristics includes a ZnO thin film having excellent surface smoothness. ZnO-based thin films (an n-type contact layer, an n-type clad layer, an active layer, a p-type clad layer, and a p-type contact layer primarily including ZnO are formed sequentially by an ECR sputtering method or other suitable method on a zinc-polar surface of a ZnO substrates. A transparent electrode and a p-side electrode are formed by an evaporation method or other suitable method on a surface of the p-type contact layer, and an n-side electrode is formed on an oxygen-polar surface of the ZnO substrate.
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申请公布号 |
US2006054888(A1) |
申请公布日期 |
2006.03.16 |
申请号 |
US20050518945 |
申请日期 |
2005.07.13 |
申请人 |
ITO YOSHIHIRO;KADOTA MICHIO |
发明人 |
ITO YOSHIHIRO;KADOTA MICHIO |
分类号 |
C23C14/08;H01L29/12;C23C16/40;H01L21/00;H01L21/36;H01L21/363;H01L29/786;H01L33/18;H01L33/28;H01L33/42;H01S5/327;H01S5/347 |
主分类号 |
C23C14/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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