NONVOLATILE SEMICONDUCTOR STORAGE DEVICE

摘要

A nonvolatile semiconductor storage device comprises a plurality of memory cells having magnetic resistance elements, a write data processing circuit for feeding the individual memory cells with write data to be written therein, and a read data processing circuit for processing the read data to be read out from the memory cells, thereby to create output data to be outputted to the outside. At the writing action, the write data processing circuit feeds common write data to an n-number (n: an integer of 2 or more) of memory cells. At the reading action, the read data processing circuit determines one output data on the basis of the n-number of read data individually read out from the n-number of memory cells. In case the n indicates an odd number, the read data processing circuit determines one output data from the n-number of read data by performing a majority rule operation.