摘要 |
When a semiconductor film is irradiated with conventional pulsed laser light, unevenness, which is called as ridge, is caused on the surface of the semiconductor film. In the case of a top-gate type TFT, element characteristics are changed depending on the ridge. In particular, there is a problem in that variation in the plural thin film transistors electrically connected in parallel with one another. According to the present invention, in manufacturing a circuit including plural thin film transistors, the width LP of a region (not including a microcrystal region) that is melted by irradiating a semiconductor film with light of a continuous wave laser is enlarged, and active layers of a plurality of thin film transistors (that are electrically connected in parallel with one another) are arranged in one region.
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申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD.;YAMAZAKI, SHUNPEI;TANAKA, KOICHIRO |
发明人 |
YAMAZAKI, SHUNPEI;TANAKA, KOICHIRO |