Method for forming poly silicon layer of poly silicon thin film transistor,申请号KR19980024342-传众专利搜索

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发明名称	Method for forming poly silicon layer of poly silicon thin film transistor
摘要
申请公布号	KR100535350(B1)	申请公布日期	2006.03.16
申请号	KR19980024342	申请日期	1998.06.26
申请人		发明人
分类号	H01L21/24	主分类号	H01L21/24
代理机构		代理人
主权项
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