| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor laser device which can emit light having a plurality of wavelengths and can be made higher in reliability and smaller in size, and to provide its manufacturing method. <P>SOLUTION: One-chip semiconductor laser element 1000 used for the semiconductor laser device has a structure wherein a red semiconductor laser element 2 and an infrared semiconductor laser element 3 are stacked on a bluish violet semiconductor laser element 1. The bluish violet semiconductor laser element 1 is manufactured by forming a semiconductor layer on a GaN substrate. The red semiconductor laser element 2 and the infrared semiconductor laser element 3 are manufactured by forming a semiconductor layer on a GaN substrate. The elastic modulus of GaAs is smaller than that of GaN. The length L2 of the red semiconductor laser element 2 and the length L3 of the infrared semiconductor laser element are longer than that L1 of the bluish violet semiconductor laser element 1. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
