| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor memory device capable of saving power consumption by reducing a power supply voltage to be output to a word line driver in a standby state and a loss caused by a current leakage. SOLUTION: This semiconductor memory device 100 is constructed in such a manner that a booster circuit 20 generates a predetermined power supply voltage Vpp exceeding an external power supply voltage Vcc, and supplies it to a plurality of storage blocks B1 to Bm via a global power line GPL. Each storage block (e.g., B1) includes a local power line LPL1, a plurality of functional circuits WD11 to WD1n connected to the local power line LPL1, and a voltage controller SC1 connected between the global power line GPL and the local power line LPL1. The voltage controller SC1 outputs the predetermined power supply voltage Vpp or a first voltage Vpp-Vt in a first period and a second period respectively via the local power line PL1 to the functional circuits WD11 to WD1n on the basis of a selection signal/BS1. The first voltage Vpp-Vt exceeds the external power supply voltage Vcc, but it is lower than the prescribed power supply voltage Vpp. COPYRIGHT: (C)2006,JPO&NCIPI
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