| 摘要 |
A correction voltage retaining capacitor C 2 , a correction voltage write transistor Tr 4 , and a switching transistor Tr 5 are added to a pixel structure of an SES drive method provided with an organic EL element E 1 as a light emitting element, a light emission drive transistor Tr 1 , a data write transistor Tr 2 , and an erase transistor Tr 3 which can erase electrical charges in a light emission maintaining capacitor C 1 . With the ON operation of the erase transistor Tr 3 , the correction voltage write transistor Tr 4 is turned on, and the switching transistor Tr 5 is turned off. In this state, the threshold voltage (Vth) of the light emission drive transistor Tr 1 is written in the correction voltage retaining capacitor C 2 . When pixels are lit, by a gate-to-source voltage obtained by adding the threshold voltage written in the correction voltage retaining capacitor C 2 to a data voltage written in the light emission maintaining capacitor C 1 , drain current of the light emission drive transistor Tr 1 flows. Thus, among respective pixels, a lighting operation is performed in a state in which variations of light emission intensities caused by variations of threshold voltages of the light emission drive transistor Tr 1 are restrained.
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