| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To provide a wide gap semiconductor device such as SiC or the like used at a high temperature of 150°C or higher, wherein insulating properties of the wide gap semiconductor device is improved to obtain a high withstand voltage wide gap semiconductor device. <P>SOLUTION: The outer face of a wide gap semiconductor element 13 is coated with a combined polymer compound 16 which contains one kind or more of silicon containing polymers having bridged structures formed of siloxane (Si-O-Si coupler). The combined polymer compound has, for instance, one kind or two kinds or more reaction groups (A') selected from a group of Si-R<SP>1</SP>, Si-O-R<SP>2</SP>and Si-R<SP>3</SP>-OCOC(R<SP>4</SP>)=CH<SB>2</SB>, and has the bridged structure by Si-O-Si coupling at one location or more. A component of a weight average molecular amount 1,000 or less is a silicon containing polymer of 20 wt.% or less. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
