| 摘要 |
PROBLEM TO BE SOLVED: To perform predetermined stress measurements highly accurately and at a high speed regardless of the temperature changes of a periphery and a material itself without requiring any temperature regulating mechanism for keeping the temperature of a semiconductor material always constant, and requiring many excess processes. SOLUTION: The stress measuring method of a semiconductor material has a step for projecting an excitation light whose wavelength reaches a single-crystal silicon substrate 3A on a semiconductor material 3 created by laminating an SiGe layer 3C and a distortion silicon layer 3D on the single-crystal silicon substrate 3A, a step for estimating the temperature of the semiconductor material 3 based on the peak shifting amount of the Raman spectrum obtained from the substrate 3A in response to the projection, a step for correcting the peak shifts of the Raman spectrums of the distortion silicon layer 3D and the SiGe layer 3C by using the estimated temperature, and a step for calculating the inner stresses of the respective layers 3D, 3C by the peak-shift information of the corrected Raman spectrums. COPYRIGHT: (C)2006,JPO&NCIPI
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