| 摘要 |
PROBLEM TO BE SOLVED: To provide a surface-emitting semiconductor laser element having simple structure capable of emitting laser light of high output which is oscillated in a single horizontal mode (basic horizontal mode) in spite of simple structure capable of attaining easier manufacturing, and to provide a method for manufacturing the surface emitting semiconductor laser. SOLUTION: Each of pairs consists of a semiconductor film having a composition of p-type Al<SB>x</SB>Ga<SB>1-x</SB>As (0<x≤1), and a semiconductor film consisting of p-type GaAs. The pairs are alternately laminated and formed as a part (second upper reflector 15) of an upper reflector constituting a resonator together with a lower reflector 12 in a format that refractive index differences between respective pair films are successively increased in accordance with separation from an active area 13 (active layer). The composition ratio of the semiconductor films is set so that the ratio (ratio x) of aluminium is gradually increased in accordance with separation from the active area 13 (active layer). COPYRIGHT: (C)2006,JPO&NCIPI
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