SEMICONDUCTOR DEVICE, ITS MANUFACTURING METHOD, GATE ELECTRODE, AND ITS MANUFACTURING METHOD

摘要

PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device which can manufacture efficiently a minute gate electrode by reducing the opening size in such a way that a gate electrode opening may be made thick and formed by using ordinary ultraviolet-ray exposure. SOLUTION: The manufacturing method of a semiconductor device comprises a gate electrode opening formation process for forming a gate electrode opening 10a in the layer for forming a gate electrode opening by forming a layer for the gate electrode opening formation including at least one layer of an ultraviolet-ray resist layer 2 on the gate electrode formation object surface, a layer formation process for forming over-gate formation which forms layers 3 and 4 for over-gate formation for forming the over-gate section in the gate electrode on the layer for the gate electrode opening formation, a gate electrode opening reduction process for reducing the opening diameter of the gate electrode opening, and a gate electrode formation process for forming a gate electrode 30 in the gate electrode opening. COPYRIGHT: (C)2006,JPO&NCIPI