发明名称 LEVEL SHIFT CIRCUIT AND SEMICONDUCTOR STORAGE DEVICE USING THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a level shift circuit that reduces standby current in the level shift circuit provided in a latter stage of a word-line driver circuit, and a semiconductor storage device using the circuit. SOLUTION: The circuit has an amplifier that is supplied with an input signal having a first signal level and amplifies the signal, a control circuit that is inputted with a control signal and turns on and off an output channel of the amplifier, and a holding circuit that holds an output signal having a second signal level outputted from the control circuit, wherein leakage current is reduced by turning off the output channel of the amplifier by the control circuit at standby. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006073098(A) 申请公布日期 2006.03.16
申请号 JP20040255516 申请日期 2004.09.02
申请人 SONY CORP 发明人 HAYABUCHI MAKOTO;HAGA AKIRA
分类号 G11C11/407 主分类号 G11C11/407
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