| 摘要 |
A semiconductor apparatus includes a semiconductor chip 61 including a power semiconductor device using a wide band gap semiconductor, base materials 62 and 63 , first and second intermediate members 65 and 68 a, a heat conducting member 66 , a radiation fin 67 , and an encapsulating material 68 for encapsulating the semiconductor chip 61 , the first and second intermediate member 65 and 68 a and the heat conducting member 66 . The tips of the base materials 62 and 63 work respectively as external connection terminals 62 a and 63 a. The second intermediate member 68 a is made of a material with lower heat conductivity than the first intermediate member 65 , and a contact area with the semiconductor chip 61 is larger in the second intermediate member 68 a than in the first intermediate member.
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