发明名称 MANUFACTURING METHOD FOR THIN-FILM TRANSISTOR (TFT) SUBSTRATE AND STRIPPING COMPOSITION
摘要 <p><P>PROBLEM TO BE SOLVED: To provide a manufacturing method for a thin-film transistor (TFT) substrate that can simplify a manufacturing process of a TFT substrate. <P>SOLUTION: The manufacturing method includes the steps of forming a TFT pattern on a substrate 100, forming a protection film 140, forming a photoresist layer, forming a picture element region 150a, forming a picture electrode 170 and an electrically conductive film 160 separated from each other, stripping a photoresist pattern 150 using a stripping composition 184, separating the conductive film 160 formed on the photoresist surface from the substrate 100, and resolving the conductive film separated in a storage tank 186. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p>
申请公布号 JP2006074039(A) 申请公布日期 2006.03.16
申请号 JP20050242401 申请日期 2005.08.24
申请人 SAMSUNG ELECTRONICS CO LTD 发明人 BOKU KOSHOKU;KIM SHI-YUL;CHOUNG JONG-HYUN;SHIN WON-SUK
分类号 H01L21/306;G02F1/1343;G02F1/1368;G03F7/42 主分类号 H01L21/306
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