| 摘要 |
<p><P>PROBLEM TO BE SOLVED: To obtain a low dark current solid state imaging device in which dark current difference is eliminated or suppressed between adjacent photoelectric conversion elements and high sensitivity is ensured even at the time of high speed reading. <P>SOLUTION: A photodiode is constituted by providing a well 302 on a wafer substrate 301 and forming diffusion layers 101a and 101b in the well. A well contact 306 is formed between the diffusion layers 101a and 101b. Isolation regions 303b and 303a are provided between the well contact and the diffusion layer and channel stop layers 307b and 307a are provided beneath the isolation regions 303b and 303a. A conductive layer 304 is provided on the isolation region 303b and a sidewall 308 is provided on the side face of the conductive layer 304. Assuming the distance between the end of the isolation region 303b and the conductive layer 304 is a, the width of the sidewall 308 is b, and the isolation width is c, following relation is satisfied; c>a≥b. <P>COPYRIGHT: (C)2006,JPO&NCIPI</p> |
