| 摘要 |
PROBLEM TO BE SOLVED: To solve the problem that a semiconductor integrated circuit does not normally operate after the lapse of a long period of time by causing deterioration with the passage of time caused by an NBTI (Negative Bias Temperature Instability) phenomenon by the staining-out of boron when a current flows to an MOS transistor at all the time. SOLUTION: The semiconductor device comprises: a first semiconductor integrated circuit 11 having a predetermined function, the first semiconductor integrated circuit outputting a required output signal; a second semiconductor integrated circuit 12 in which a plurality of MOS elements (PMOS transistor or NMOS transistor) for independently being switched to and from a conducted state and a non-conducted state in accordance with a plurality of gate signals each having different timing is provided and the plurality of MOS elements are connected in parallel to an output or an input of the first semiconductor integrated circuit; and a pulse generating circuit 13 for generating and outputting the plurality of gate signalsΦi ((i)=1, 2, 3) each having different timing with respect to the plurality of MOS elements in the second semiconductor integrated circuit. COPYRIGHT: (C)2006,JPO&NCIPI
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