发明名称 VOLTAGE SUPPLY CIRCUIT OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce leak current of a voltage supply circuit using a MOS transistor at the time of standby. SOLUTION: The voltage supply circuit consists of a n-channel MOS transistor TR11 with low threshold voltage in which a drain is connected to the power source side and a p-channel MOS transistor TR12 in which a source is connected to a source of the n-channel MOS transistor TR11 and which supplies voltage vii from the drain to a load circuit. At the time of standby, since voltage Vge=1V is impressed between a gate and the source of the p-channel MOS transistor TR12, the p-channel MOS transistor operates in a cutoff area deeper than usual. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006074628(A) 申请公布日期 2006.03.16
申请号 JP20040257644 申请日期 2004.09.03
申请人 FUJITSU LTD 发明人 BANDOU YASUHIDE
分类号 H03K19/00 主分类号 H03K19/00
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