Method of forming nickel-silicon compound, semiconductor device, and semiconductor device manufacturing method

摘要

There is disclosed a method of forming a nickel film on a silicon substrate or a silicon film, followed by applying an annealing process such that a final annealing temperature TH is in the range of 500° C.<TH<=600° C. to form a nickel-silicon compound, the method comprising a first annealing step of, by using an annealing device configured to change an annealing temperature in a stepwise manner, heating the substrate up to a first annealing temperature close to 400° C., followed by annealing the substrate at the first annealing temperature for a predetermined period, and a second annealing step of, by using the annealing device, heating the substrate up to a second annealing temperature which is the final annealing temperature TH, followed by annealing the substrate at the second annealing temperature for a predetermined period.