| 发明名称 |
Method for fabricating a drain/source path |
| 摘要 |
A method for fabricating a drain/source path is provided, in which essentially firstly a nitride layer is applied, on which a TEOS layer is then patterned. The patterning is effected in a simplified manner by virtue of the fact that the nitride layer acts as an etching stop layer during the etching away of the TEOS layer.
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| 申请公布号 |
US2006054979(A1) |
申请公布日期 |
2006.03.16 |
| 申请号 |
US20040010643 |
申请日期 |
2004.12.13 |
| 申请人 |
KRATZERT PHILIPP;SCHULZE NORBERT;HAUFE JUERG;HABERKERN ROLAND;RIEDEL STEPHAN;HAIBACH PATRICK |
发明人 |
KRATZERT PHILIPP;SCHULZE NORBERT;HAUFE JUERG;HABERKERN ROLAND;RIEDEL STEPHAN;HAIBACH PATRICK |
| 分类号 |
H01L21/8238;H01L21/336;H01L29/78;H01L29/94 |
主分类号 |
H01L21/8238 |
| 代理机构 |
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