发明名称 |
Byte-operational nonvolatile semiconductor memory device |
摘要 |
Byte-operational nonvolatile semiconductor memory devices are capable of erasing stored data one byte at a time. A byte memory cell may include a memory cell array of 1-byte memory transistors. The 1-byte memory transistors may be arranged in one direction, each including a junction region and a channel region formed in an active region. A byte memory cell may include a byte select transistor. The select transistor may be disposed in the active region and including a junction region that is directly adjacent to a junction of each of the 1-byte memory transistors. The byte select transistor may be disposed over or under the 1-byte memory transistors perpendicular to the arranged direction of the 1-byte memory transistors.
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申请公布号 |
US2006054965(A1) |
申请公布日期 |
2006.03.16 |
申请号 |
US20050269624 |
申请日期 |
2005.11.09 |
申请人 |
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发明人 |
KIM SUNG-HO;LEE NAE-IN;KOH KWANG-WOOK;BAE GEUM-JONG;KIM KI-CHUL;KIM JIN-HEE;CHO IN-WOOK;KIM SANG-SU |
分类号 |
H01L21/8247;H01L29/788;G11C11/34;G11C16/04;G11C17/12;H01L21/28;H01L21/336;H01L21/8246;H01L27/02;H01L27/112;H01L27/115;H01L29/792 |
主分类号 |
H01L21/8247 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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