| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a method that easily performs the exposure transfer of a fine pattern by taking advantage of near-field light. <P>SOLUTION: A photomask 1 comprises a pillar mask base substance 2 made of materials passing exposure light and with at least the circumference partially built in a form of circular arc and a fine pattern 3 whose opening width smaller than the wavelength of the exposure light produced at the circular arc of the circumference of the mask substrate 2. By pressing this circular arc with a fine pattern 3 formed for the circumstance of the mask substrate 2 to a photosensitive resin layer to which this fine pattern 3 is transferred by exposure, the interval between the fine pattern 3 and photosensitive resin layer can be controlled to be shorter than the wavelength of exposure light so that the fine pattern 3 can be transferred satisfactorily by exposure. <P>COPYRIGHT: (C)2006,JPO&NCIPI |
