发明名称 HIGH RELIABILITY TRIPLE REDUNDANT MEMORY ELEMENT WITH INTEGRATED TESTABILITY AND VOTING STRUCTURE ON EACH LATCH
摘要 PROBLEM TO BE SOLVED: To improve soft-error resistance in triple redundant latches without increasing the physical size of the triple redundant latch so much. SOLUTION: In a preferred embodiment, the invention provides a circuit and method for a high reliability triple redundant latch with integrated testability. Three settable memory elements set an identical logical value into each settable memory element. After the settable memory elements are set, three voting structures with inputs from the first, second, and third settable memory elements, determine the logical value held on each of the settable memory elements. Data may be scanned into and out of the second settable memory element. Data is propagated through the buffer into the third settable memory element. The third settable memory element may be used to scan data out of the triple redundant latch. The propagation delay through a latch is only propagation delay of the triple redundant latch. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006073180(A) 申请公布日期 2006.03.16
申请号 JP20050230446 申请日期 2005.08.09
申请人 HEWLETT-PACKARD DEVELOPMENT CO LP 发明人 PETERSEN JOHN T;NASER HASSAN;JONATHAN P LOTZ
分类号 G11C29/04;G11C29/12;G11C29/42 主分类号 G11C29/04
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