| 摘要 |
The invention relates to a one-time programmable memory device. In order to make such a memory device particular simple and reliable, it is proposed that the device comprises a MOS selection transistor T 1 and a MOS memory transistor T 2 connected in series between a voltage supply line BL and ground Gnd. The device further comprises programming means for applying predetermined voltages Vsel, Vctrl, Vprog to the gate of the selection transistor T 1 , to the gate of the memory transistor T 2 and to the voltage supply line BL. The applied voltages Vsel, Vctrl, Vprog are selected such that they force the memory transistor T 2 into a snap-back mode resulting in a current thermally damaging the drain junction of the memory transistor T 2 . The invention relates equally to a corresponding method for programming a one time programmable memory.
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