发明名称 |
HEMT device and method of making |
摘要 |
A HEMT type device which has pillars with vertical walls perpendicular to a substrate. The pillars are of an insulating semiconductor material such as GaN. Disposed on the side surfaces of the pillars is a barrier layer of a semiconductor material such as AlGaN having a bandgap greater than that of the insulating material of the pillars. Electron flow is confined to a narrow channel at the interface of the two materials. Suitable source, drain and gate contacts are included for HEMT operation.
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申请公布号 |
US2006057790(A1) |
申请公布日期 |
2006.03.16 |
申请号 |
US20040938602 |
申请日期 |
2004.09.13 |
申请人 |
CLARKE ROWLAND C;AUMER MICHAEL E |
发明人 |
CLARKE ROWLAND C.;AUMER MICHAEL E. |
分类号 |
H01L21/338 |
主分类号 |
H01L21/338 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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