METHOD AND APPARATUS FOR FABRICATING LOW-K DIELECTRICS, CONDUCTING FILMS, AND STRAIN-CONTROLLING CONFORMABLE SILICA-CARBON MATERIALS

摘要

A method for fabricating a semiconductor device having a plurality of layers, depositing a first layer comprising a medium-k dielectric barrier layer on one of the plurality of layers, depositing a second layer comprising a low-k dielectric layer on the first layer, and depositing a third layer comprising a medium-k dielectric barrier on the second layer.