发明名称 |
Method to reduce plasma damage during cleaning of semiconductor wafer processing chamber |
摘要 |
A method and apparatus for cleaning a semiconductor manufacturing chamber comprising introducing a heteroatomic fluorine containing gas to a remote plasma source, disassociating the heteroatomic fluorine containing gas, forming diatomic fluorine, transporting gas from the remote plasma source into a processing region of the chamber, and ionizing the diatomic fluorine with an in situ plasma.
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申请公布号 |
US2006054183(A1) |
申请公布日期 |
2006.03.16 |
申请号 |
US20050096986 |
申请日期 |
2005.04.01 |
申请人 |
NOWAK THOMAS;XIA LI-QUN;ROCHA-ALVAREZ JUAN CARLOS;HOPPER BRIAN;TRACHUK YURI;BALASUBRAMANIAN GANESH;RAJ DAEMIAN |
发明人 |
NOWAK THOMAS;XIA LI-QUN;ROCHA-ALVAREZ JUAN CARLOS;HOPPER BRIAN;TRACHUK YURI;BALASUBRAMANIAN GANESH;RAJ DAEMIAN |
分类号 |
B08B6/00 |
主分类号 |
B08B6/00 |
代理机构 |
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代理人 |
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地址 |
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