| 发明名称 |
Process chamber for manufacturing seminconductor devices |
| 摘要 |
The present invention is directed to a plasma process chamber capable of maintaining a high vacuum in the idle state. The present invention maintains a high vacuum in the idle state and prevents a contamination of the wafer transferred into the process chamber.
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| 申请公布号 |
US2006054087(A1) |
申请公布日期 |
2006.03.16 |
| 申请号 |
US20040000941 |
申请日期 |
2004.12.02 |
| 申请人 |
SEO JUNG-HUN;CHOI YUN-HO;PARK YOUNG-WOOK;KIM JEONG-TAE |
发明人 |
SEO JUNG-HUN;CHOI YUN-HO;PARK YOUNG-WOOK;KIM JEONG-TAE |
| 分类号 |
C23C16/00;H01L21/3065 |
主分类号 |
C23C16/00 |
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