USING DIFFERENT GATE DIELECTRICS WITH NMOS AND PMOS TRANSISTORS OF A COMPLEMENTARY METAL OXIDE SEMICONDUCTOR INTEGRATED CIRCUIT

摘要

Complementary metal oxide semiconductor integrated circuits may be formed with NMOS and PMOS transistors having different gate dielectrics. The different gate dielectrics may be formed, for example, by a subtractive process. The gate dielectrics may differ in material, thickness, or formation techniques, as a few examples.