Method For Fabricating Of Shallow Trench Isolation Of Semiconductor Device,申请号KR20030100537-传众专利搜索

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发明名称	Method For Fabricating Of Shallow Trench Isolation Of Semiconductor Device
摘要
申请公布号	KR100561522(B1)	申请公布日期	2006.03.16
申请号	KR20030100537	申请日期	2003.12.30
申请人		发明人
分类号	H01L21/3065;H01L21/76;H01L21/762;H01L21/8242	主分类号	H01L21/3065
代理机构		代理人
主权项
地址

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