发明名称 COMPOSITION FOR FORMING INSULATING FILM, INSULATING FILM AND METHOD OF FORMING IT
摘要 PROBLEM TO BE SOLVED: To provide a composition for forming a film suitably used in a semiconductor element etc. and to provide an insulating film and a method of forming it. SOLUTION: The composition for forming the insulating film contains a compound obtained by mixing (A) a polyorganosiloxane compound having an MFI structure of a zeolite in which a nitrogen-containing compound exists in a hole formed of 10 member rings of a siloxane for constituting the MFI and (B) a polycarbosilane compound in the presence of an organic solvent and heating it. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006073890(A) 申请公布日期 2006.03.16
申请号 JP20040257374 申请日期 2004.09.03
申请人 JSR CORP 发明人 AKIYAMA MASAHIRO;HATTORI SEITARO;SHIODA ATSUSHI
分类号 H01L21/316;H01L21/768;H01L23/522 主分类号 H01L21/316
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