发明名称 |
COMPOSITION FOR FORMING INSULATING FILM, INSULATING FILM AND METHOD OF FORMING IT |
摘要 |
PROBLEM TO BE SOLVED: To provide a composition for forming a film suitably used in a semiconductor element etc. and to provide an insulating film and a method of forming it. SOLUTION: The composition for forming the insulating film contains a compound obtained by mixing (A) a polyorganosiloxane compound having an MFI structure of a zeolite in which a nitrogen-containing compound exists in a hole formed of 10 member rings of a siloxane for constituting the MFI and (B) a polycarbosilane compound in the presence of an organic solvent and heating it. COPYRIGHT: (C)2006,JPO&NCIPI
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申请公布号 |
JP2006073890(A) |
申请公布日期 |
2006.03.16 |
申请号 |
JP20040257374 |
申请日期 |
2004.09.03 |
申请人 |
JSR CORP |
发明人 |
AKIYAMA MASAHIRO;HATTORI SEITARO;SHIODA ATSUSHI |
分类号 |
H01L21/316;H01L21/768;H01L23/522 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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