发明名称 SEMICONDUCTOR MEMORY DEVICE
摘要 PROBLEM TO BE SOLVED: To normally perform data writing to a memory cell even when data can not be written in the memory cell within a column selection period of a column selection signal. SOLUTION: A semiconductor memory device is provided with a WCSL timer 10 generating a writing control signal WCSL maintaining a high level for a prescribed period even if the level of a column selection line CSL is made low. When the selection period of the column selection line CSL is shorter than the time required for data writing of an FBC21, the writing control signal WCSL is maintained in an active state (a high level) during a prescribed period after the column selection line CSL is made to be in a non-selection state. Thereby, data writing to the FBC21 can be normally performed even when time is required for data writing of the FBC21. COPYRIGHT: (C)2006,JPO&NCIPI
申请公布号 JP2006073061(A) 申请公布日期 2006.03.16
申请号 JP20040253059 申请日期 2004.08.31
申请人 TOSHIBA CORP 发明人 OSAWA TAKASHI
分类号 G11C11/407;G11C11/404 主分类号 G11C11/407
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