发明名称 Aperture masks for circuit fabrication
摘要 In various embodiments, the invention is directed to aperture mask deposition techniques for use in creating integrated circuits or integrated circuit elements. In other embodiments, the invention is directed to different apparatuses that facilitate the deposition techniques. The techniques generally involve sequentially depositing material through a number of aperture masks formed with patterns that define layers or portions of various layers of a circuit. In this manner, circuits can be created using aperture mask deposition techniques, without requiring any etching or photolithography, which is particularly useful when organic semiconductors are involved. The techniques can be useful in creating circuit elements for electronic displays, low-cost integrated circuits such as radio frequency identification (RFID) circuits, and other circuits.
申请公布号 US2006057857(A1) 申请公布日期 2006.03.16
申请号 US20050258330 申请日期 2005.10.25
申请人 3M INNOVATIVE PROPERTIES COMPANY 发明人 FLEMING PATRICK R.;HAASE MICHAEL A.;KELLEY TOMMIE W.;MUYRES DAWN V.;THEISS STEVEN
分类号 H01L21/31;C23C14/04;C23C14/24;G03F1/16;H01L21/336;H01L21/363;H01L29/786;H01L51/05 主分类号 H01L21/31
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