Optical semiconductor device and method of fabricating optical semiconductor device

摘要

In an optical semiconductor device including, at least, an n-type semiconductor layer having n-type conductivity, an active layer, a p-type semiconductor layer having p-type conductivity, current blocking layers doped with Fe are located on opposite sides of the p-type semiconductor layer. Fe and Be are simultaneously supplied as dopants when forming the p-type semiconductor layer. In this event, the flow rates of source materials supplying the respective elements are adjusted so that the p-type semiconductor layer has a hole concentration of about 1.0x10¹⁸/cm³ and an Fe concentration of about 2x10¹⁶ to 8x10¹⁶/cm³.