<p>A method of forming a stacked memory module from a plurality of memory devices is provided. Each of the plurality of memory devices is modified to include a logic block for decoding a plurality of chip select signals. A first high density memory module is also provided that includes the modified memory devices and a serial presence detect device. The first high density memory module is included within an electronic system. Also, an additional method of forming a stacked memory module is provided, the method requiring modification of an address buffer to include a logic mock for decoding a plurality of chip select signals. A second high density memory module is also provided that includes the modified address buffer and a serial presence detect device. The second high density memory module is included within an electronic system.</p>
申请公布号
WO2006028823(A1)
申请公布日期
2006.03.16
申请号
WO2005US30864
申请日期
2005.08.30
申请人
MICRON TECHNOLOGY, INC.;KINSLEY, THOMAS, H.;KILBUCK, KEVIN, M.