| 发明名称 |
Method for etching high aspect ratio features in III-V based compounds for optoelectronic devices |
| 摘要 |
<p>RIE etching of III-V semiconductors is performed using HBr or combinations of group VII gaseous species (Br, F, I) in a mixture with CH4 and H2 to etch high aspect ratio features for optoelectronic devices.
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| 申请公布号 |
EP1557874(A3) |
申请公布日期 |
2006.03.15 |
| 申请号 |
EP20040019988 |
申请日期 |
2004.08.23 |
| 申请人 |
AGILENT TECHNOLOGIES, INC. |
发明人 |
MIRKARIMI, LAURA WILLS |
| 分类号 |
H01L21/308;H01L21/3065;H01L21/306;H01L21/3213 |
主分类号 |
H01L21/308 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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