| 摘要 |
The process is for depositing gallium arsenide layers on a heated substrate. After being vaporised, the gallium is ionised in vacuum and is electrically accelerated towards the substrate in ion clusters. According to the invention, gaseous inorganic or organic arsenic compounds are simultaneously supplied to the heated substrate and these release arsenic as a result of the substrate heating. The arsenic reacts directly with the accelerated gallium ion clusters. The residues of the decomposed arsenic compounds are extracted. |
