| 摘要 |
<p>PURPOSE:To block the progress of oxidation from the surface and to reduce the change of the value of resistance even in the environment of high temperature and high degree of humidity by a method wherein an electrode to be used for anodic oxidation is provided between a thin film, consisting of tantalum nitride, and a substrate and besides, the whole surface of the thin film resistor is covered by tantalum oxide or an electrode. CONSTITUTION:A covering for anodic oxidation such as Cr-Au, Ni-Cr, Ni-Cr-Au and the like, which become an electrode, is coated on an aluminum substrate 101, and a prescribed pattern 102 is formed using a photolithographic method and the like. Then, tantalum 103 which becomes a resistor is coated on the whole surface, and the pattern contacting the exposed surface of the substrate 101 is formed using the same photolithographic method as above. Subsequently, a resist 104 is provided on the region ranging from the end part of said pattern to the surface of the pattern 103, the region surrounded by the resist 104 is anodic-oxidized by dripping a chromic acid solution 105 of 0.3% thereon, and said region is changed to tantalum oxide. Thus, the progress of oxidation on the surface of the region can be prevented.</p> |
