发明名称 |
SOUND DETECTION MECHANISM |
摘要 |
<p>A sound detecting mechanism is provided which forms a diaphragm with a required thickness by thickness control and yet restrains distortion of the diaphragm to provide high sensitivity. The sound detecting mechanism comprises a pair of electrodes forming a capacitor on a substrate A in which one of the electrodes is a back electrode C forming perforations Ca therein corresponding to acoustic holes and the other of the electrodes is a diaphragm B. The diaphragm B is mounted on the substrate A while the back electrode C is mounted in a position opposed to the diaphragm B across a void F to be supported by the substrate A, the back electrode C being formed by polycrystal silicon of 5µm to 20µm in thickness.</p> |
申请公布号 |
EP1635608(A1) |
申请公布日期 |
2006.03.15 |
申请号 |
EP20040745299 |
申请日期 |
2004.05.25 |
申请人 |
HOSIDEN CORPORATION;TOKYO ELECTRON LIMITED |
发明人 |
OHBAYASHI, YOSHIAKI;YASUDA, MAMORU;SAEKI, SHINICHI;KOMAI, MASATSUGU;KAGAWA, KENICHI |
分类号 |
H04R19/00;H01L29/84;H04R7/02;H04R7/04;H04R19/01;H04R19/04;(IPC1-7):H04R19/01 |
主分类号 |
H04R19/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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