| 摘要 |
PURPOSE:To highly stabilize a chemical Ni plating soln. and to obtain a high purity Ni film by adding a compd. contg. S, N and C in one molecule to the plating soln. contg. Ni ions, an Ni ion complexing agent and an Ni ion reducing agent. CONSTITUTION:A compd. contg. S, N and C in 1mol., e.g., 1-allyl-2-thiourea, 2,5-dimercapto-1,3,4-thiazole or L-cystine is added to a chemical Ni plating soln. contg. Ni ions, an Ni ion complexing agent such as gluconic acid and an Ni ion reducing agent such as dimethylamineborane. The resulting plating soln. has high stability in the pH range from acidity to low alkalinity and the boron content can be reduced. By using the plating soln., a high purity Ni film can be rapidly and stably obtd. |
