TUNABLE RADIATION EMITTING SEMICONDUCTOR DEVICE

摘要

There is described a tunable radiation emitting semiconductor device (50) comprising at least one elongated structure (120) at least partially fabricated from one or more semiconductor materials exhibiting a bandgap characteristic including one or more energy transitions whose energies correspond to photon energies of light radiation. The at least one structure (120) is thereby operable to emit light radiation therefrom in response to a current flow therethrough. Moreover, the at least one elongated structure (120) is fabricated to be sufficiently narrow for quantum confinement of charge carriers associated with the current flow to occur therein. Furthermore, the at least one elongated structure (120) further comprises an electrode arrangement (190) for applying an electric field to the at least one elongated structure (120) for causing bending of its bandgap characteristic for modulating a wavelength of the light radiation emitted in operation from the at least one structure (120) in response to the current flow therethrough.