发明名称 |
PHYSICAL VAPOR DEPOSITION OF TITANIUM-BASED FILMS |
摘要 |
<p>High density oxide films are deposited by a pulsed-DC, biased, reactive sputtering process from a titanium containing target to form high quality titanium containing oxide films. A method of forming a titanium based layer or film according to the present invention includes depositing a layer of titanium containing oxide by pulsed-DC, biased reactive sputtering process on a substrate. In some embodiments, the layer is TiO2. In some embodiments, the layer is a sub-oxide of Titanium. In some embodiments, the layer is TixOy wherein x is between about 1 and about 4 and y is between about 1 and about 7. In some embodiments, the layer can be doped with one or more rare-earth ions. Such layers are useful in energy and charge storage, and energy conversion technologies.</p> |
申请公布号 |
EP1633902(A2) |
申请公布日期 |
2006.03.15 |
申请号 |
EP20040751754 |
申请日期 |
2004.05.21 |
申请人 |
SYMMORPHIX, INC. |
发明人 |
DEMARAY, RICHARD, ERNEST;ZHANG, HONGMEI;NARASIMHAN, MUKUNDAN;MILONOPOULOU, VASSILIKI |
分类号 |
C23C14/00;C23C14/08;C23C14/34;H01L21/285;H01L21/314;H01L21/316;H01L21/768;(IPC1-7):C23C14/14 |
主分类号 |
C23C14/00 |
代理机构 |
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代理人 |
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地址 |
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