| 发明名称 |
DC AMPLIFIER AND SEMICONDUCTOR INTEGRATED CIRCUIT THEREOF |
| 摘要 |
<p>A rectangular parallelepiped projecting portion 21 having a height of H B and a width of W B is formed on a silicon substrate, and a gate oxide film is formed on a part of the top surface and the side surface of the projecting portion 21. A source and a drain are formed on both sides of the gate electrode 26 to form a MOS transistor. The MOS transistor configures a DC amplifier. The DC amplifier includes a differential amplification circuit having MOS transistors 61 and 62, thereby realizing a high-gain DC amplifier.</p> |
| 申请公布号 |
EP1635394(A1) |
申请公布日期 |
2006.03.15 |
| 申请号 |
EP20040745815 |
申请日期 |
2004.06.11 |
| 申请人 |
KABUSHIKI KAISHA TOYOTA JIDOSHOKKI;NIIGATA SEIMITSU CO., LTD.;OHMI, TADAHIRO |
发明人 |
OHMI, TADAHIRO;NISHIMUTA, T.;MIYAGI, HIROSHI;SUGAWA, SHIGETOSHI;TERAMOTO, AKINOBU |
| 分类号 |
H01L21/336;H01L21/8238;H01L27/092;H01L29/78;H01L29/786;H03F3/343;H03F3/45;(IPC1-7):H01L27/092;H03F3/34 |
主分类号 |
H01L21/336 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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