| 发明名称 |
Self-patterning of photo-active dielectric materials for interconnect isolation |
| 摘要 |
In accordance with the objectives of the invention a new method is provided for the creation of an interconnect pattern. The invention provides for a layer of Photo-Active Dielectric (PAD) to be used for the insulation material in which the interconnect pattern is created, this without the use of an overlying exposure mask of photoresist.
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| 申请公布号 |
US7012022(B2) |
申请公布日期 |
2006.03.14 |
| 申请号 |
US20030697745 |
申请日期 |
2003.10.30 |
| 申请人 |
CHARTERED SEMICONDUCTOR MANUFACTURING LTD. |
发明人 |
LIU WUPING;ZHANG BEI CHAO;HSIA LIANG CHOO |
| 分类号 |
H01L21/4763;H01L21/48;H01L21/768;H01L23/48;H01L23/532;H01L29/40 |
主分类号 |
H01L21/4763 |
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