Method of manufacturing semiconductor device having silicide layer

摘要

A method of manufacturing a semiconductor device has the steps of: (a) evacuating a sputtering chamber to a pressure of 1.5x10^-8 torr to 9x10^-8 torr and heating a silicon substrate to a temperature of 330° C. to 395° C.; (b) sputtering Co on the heated silicon substrate; (c) after the step (b), forming a cap layer having a small oxygen transmission performance on the silicon substrate without exposing the silicon substrate in air; (d) after the step (c), performing primary annealing; (e) after the step (d), removing the cap layer and unreacted Co; and (f) after the step (e), performing secondary annealing by heating the silicon substrate to a temperature of 450° C. to 750° C.